首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   391101篇
  免费   33236篇
  国内免费   21042篇
电工技术   27086篇
技术理论   53篇
综合类   51955篇
化学工业   43136篇
金属工艺   15467篇
机械仪表   23600篇
建筑科学   58656篇
矿业工程   20146篇
能源动力   12096篇
轻工业   20842篇
水利工程   19420篇
石油天然气   16425篇
武器工业   4266篇
无线电   25109篇
一般工业技术   34289篇
冶金工业   19897篇
原子能技术   4699篇
自动化技术   48237篇
  2024年   759篇
  2023年   3985篇
  2022年   7586篇
  2021年   9313篇
  2020年   10024篇
  2019年   8445篇
  2018年   7857篇
  2017年   9672篇
  2016年   11335篇
  2015年   12461篇
  2014年   22685篇
  2013年   20684篇
  2012年   27527篇
  2011年   28880篇
  2010年   22805篇
  2009年   23621篇
  2008年   21919篇
  2007年   28171篇
  2006年   25987篇
  2005年   22350篇
  2004年   18832篇
  2003年   16689篇
  2002年   13918篇
  2001年   11695篇
  2000年   9965篇
  1999年   8293篇
  1998年   6351篇
  1997年   5557篇
  1996年   4862篇
  1995年   4308篇
  1994年   3766篇
  1993年   2780篇
  1992年   2451篇
  1991年   1789篇
  1990年   1557篇
  1989年   1413篇
  1988年   1114篇
  1987年   705篇
  1986年   550篇
  1985年   411篇
  1984年   387篇
  1983年   273篇
  1982年   253篇
  1981年   210篇
  1980年   157篇
  1979年   143篇
  1978年   79篇
  1977年   83篇
  1976年   67篇
  1975年   69篇
排序方式: 共有10000条查询结果,搜索用时 22 毫秒
91.
92.
93.
同忻选煤厂采用重介质选煤技术,磁性介质的消耗较大,为此,相关技术人员针对介质回收系统设备进行了改造设计。改造后,设备运行稳定,介质消耗降低,提高了原煤的分选效率,创造了较好的安全经济效益。  相似文献   
94.
道教洞天福地作为中国名山风景的经典类型之一,在宗教山岳景观中占据独特地位。浙东天台山水神秀,历代高道以入山隐修为主要目的,形成了道教在区域山林的景观文化基础。从天台山“神仙之乡”的文化背景出发,从“想象与实践”的视角切入,梳理了天台山洞天福地的景观流变:分析其“不死之福庭”地域性景观的形成经历了“赤城→桐柏”的信仰转移过程;以天台山为坐标,洞天福地格局打破了区域“层级”分布特征,而呈现大范围“州郡”空间格局。作为“联结点”的天台山,洞天世界沟通了宇宙、山、人3个基本场域,由此衍生出“洞宫”式和“周回”式山岳空间营建典范。旨在挖掘洞天福地中典型案例的价值,为中国洞天福地体系的构建提供理论依据。  相似文献   
95.
Discrete Element Method (DEM) has been used for numerical investigation of sintering-induced structural deformations occurring in inverse opal photonic structures. The influence of the initial arrangement of template particles on the stability of highly porous inverse opal α-Al2O3 structures has been analyzed. The material transport, densification, as well as formation of defects and cracks have been compared for various case studies. Three different stages of defects formation have been distinguished starting with local defects ending with intrapore cracks. The results show that the packing of the template particles defined during the template self-assembly process play a crucial role in the later structural deformation upon thermal exposure. The simulation results are in very good agreement with experimental data obtained from SEM images and previous studies by ptychographic X-ray tomography.  相似文献   
96.
以中低温煤焦油沥青质为原料,采用NiMoW/γ-Al_2O_3商业催化剂,在反应温度380℃、反应压力8 MPa和反应时间1.5 h条件下,分别在不同剂油质量比(1∶25、1∶20、1∶15、1∶10)条件下进行加氢实验,通过采用元素分析、FT-IR、XRD、~1H-NMR和XPS等分析表征手段,考察不同剂油质量比对中低温煤焦油沥青质加氢转化过程的影响。结果表明,随着剂油质量比的增加,沥青质转化率提高,加氢产物分布也发生大幅变化,沥青质和芳香分轻质化转化为饱和分。但随着剂油质量比的进一步提高,同时也发生了更多的裂化反应和缩合反应,剂油质量比在合适范围能够很好地起到加氢轻质化且抑制结焦的效果。  相似文献   
97.
98.
High amplitude non-linear acoustic methods have shown potential for the identification of micro damage in brittle materials such as concrete. Commonly, these methods evaluate a non-linearity parameter from the relative change in frequency and attenuation with strain amplitude. Here, a novel attenuation model is introduced to describe the free reverberation from a standard impact resonance frequency test, together with an algorithm for estimating the unknown model coefficients. The non-linear variation can hereby by analyzed over a wider dynamic range as compared to conventional methods. The experimental measurement is simple and fully compatible with the standardized free-free linear impact frequency test.  相似文献   
99.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.  相似文献   
100.
A small handful of recent studies have addressed a phenomenon known as “phantom vibration syndrome”. This refers to when phone users perceive their device to vibrate, indicating that a call or text is incoming, when in fact the phone did not vibrate at all. Though these studies show that most users do not find phantom vibration hallucinations to be very bothersome, they also find that a large majority of users experience this phenomenon. This paper explores what the striking prevalence of phantom vibration syndrome means for our contemporary relationships with technology. I begin with a review of the theories purporting to explain these data, which largely rely on particular understandings of the brain. Next I develop an alternative theory of phantom vibration syndrome based on insights from the philosophical tradition of phenomenology. This account considers the ways users develop bodily and perceptual habits regarding how the phone is understood and used. By critically contrasting these different theories, we can refine our questions about what the high prevalence of phantom vibration syndrome implies about our contemporary technological situation.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号